GaAs HBT MMIC

Innogration

远创达

包装：散装 类别：开发板，套件，编程器 评估板 - 传感器 描述：BOARD EVAL PIC32 MTOUCH

MICROCHIP

微芯科技

包装：散装 类别：开发板，套件，编程器 评估板 - 传感器 描述：BOARD EVAL PIC32 CAP TOUCH CTMU

MICROCHIP

微芯科技

DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

文件：218.05 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

文件：200.63 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

文件：110.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉