丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB652A；Package：SSOP；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：404.67 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB652A；Package：SSOP；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：404.67 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB657A；Package：SSOP；OCTAL TRANSCEIVERS WITH PARITY GENERATORS/CHECKERS AND 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：277.76 Kbytes 页数：13 Pages

TI

德州仪器

丝印：AB657A；Package：SSOP；OCTAL TRANSCEIVERS WITH PARITY GENERATORS/CHECKERS AND 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：277.76 Kbytes 页数：13 Pages

TI

德州仪器

噪音抑制/磁性片

3M

噪音抑制/磁性片

3M

噪音抑制/磁性片

3M

包装：散装 类别：RF/IF，射频/中频和 RFID RFI 和 EMI - 屏蔽和吸收材料 描述：RF EMI ABSORBING TAPE 656.168'

3M