SN74ABT657ADBR.B芯片代码Marking-114ic电子网

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SN74ABT657ADBR	文件：277.76 Kbytes Page：13 Pages	丝印：AB657A；Package：SSOP；OCTAL TRANSCEIVERS WITH PARITY GENERATORS/CHECKERS AND 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc 文件：277.76 Kbytes 页数：13 Pages	TI 德州仪器	TI
SN74ABT657ADBR.B	文件：277.76 Kbytes Page：13 Pages	丝印：AB657A；Package：SSOP；OCTAL TRANSCEIVERS WITH PARITY GENERATORS/CHECKERS AND 3-STATE OUTPUTS State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc 文件：277.76 Kbytes 页数：13 Pages	TI 德州仪器	TI

更多AB657A供应商更新时间2025-9-19 8:30:00