丝印：AB646A；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Typical VOLP (Output Ground Bounce)

文件：623.64 Kbytes 页数：23 Pages

TI

德州仪器

丝印：AB646A；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Typical VOLP (Output Ground Bounce)

文件：623.64 Kbytes 页数：23 Pages

TI

德州仪器

丝印：AB646；Package：SSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：SSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB646；Package：TSSOP；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bou

文件：481.98 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB652A；Package：SSOP；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：404.67 Kbytes 页数：19 Pages

TI

德州仪器

丝印：AB652A；Package：SSOP；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

文件：404.67 Kbytes 页数：19 Pages

TI

德州仪器