丝印：A7；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

Features Fast switching speed•High Conductance•-CAR for automotive and other applications requiring unique site andcontrol change requirements;AEC-Q101 qualified and PPAP capable. Applications For general purpose switching

文件：211.08 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：A7；Package：MicroPak2；TinyLogic UHS Dual Inverter

Description The NC7WZ04 is a dual inverter from onsemi’s Ultra−High Speed (UHS) series of TinyLogic. The device is fabricated with advanced CMOS technology to achieve ultra−high speed with high output drive while maintaining low static power dissipation over a broad VCC operating range. The d

文件：406.25 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：A7；Package：MicroPak；TinyLogic UHS Dual Inverter

Description The NC7WZ04 is a dual inverter from onsemi’s Ultra−High Speed (UHS) series of TinyLogic. The device is fabricated with advanced CMOS technology to achieve ultra−high speed with high output drive while maintaining low static power dissipation over a broad VCC operating range. The d

文件：406.25 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：A7；Package：MAC06A；TinyLogic UHS Dual Inverter

General Description The NC7WZ04 is a dual inverter from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6-lead package. The device is fabricated with advanced CMOS technology to achieve ultra high speed with high output drive while maintaining low static power dissipati

文件：96.07 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：A7；Package：HUSON3；30 V, 6 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors * Exposed heat sink for excellent thermal and electrical conductivity * Leadless small S

文件：289.44 Kbytes 页数：16 Pages

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丝印：A7；Package：SC-74；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：302.68 Kbytes 页数：14 Pages

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安世

丝印：A7；Package：SOT886；Very low capacitance unidirectional quadruple ESD protection diode arrays

1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features 1.3 A

文件：682.78 Kbytes 页数：16 Pages

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丝印：A7；Package：SOD123F；30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

Features * Forward current: 2 A * Reverse voltage: 30 V * Ultra low forward voltage * Small and flat lead SMD package

文件：685.11 Kbytes 页数：9 Pages

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丝印：A7；Package：SOD123F；30 V, 2 A ultra low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a small SOD123F Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 2 A • Reverse voltage: 30 V • Ultra low forward voltage •

文件：185.55 Kbytes 页数：9 Pages

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丝印：A7；Package：CFP5；30 V, 5 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 5 A • Reverse voltage: VR ≤ 3

文件：1.2705 Mbytes 页数：12 Pages

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