PBSS9110D

Marking：A7；Package：SC-74；100 V, 1 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS9110D

Low VCEsat (BISS) transistors

PBSS9110D_15

100 V, 1 A PNP low VCEsat (BISS) transistor

PBSS9110D,115

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 1A 6TSOP

Nexperia USA Inc.

PBSS9110T

100V,1APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS8110T. FEATURES •SOT23package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolessheatgeneration APPLICATIONS •Major

PBSS9110T

LowVCEsat(BISS)transistors

PBSS9110T

100V,1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS8110T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •High

PBSS9110T-Q

100V,1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS8110T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability •High

PBSS9110X

100V,1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. NPNcomplement:PBSS8110X Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficie

PBSS9110X

100V,1APNPlowVCEsat(BISS)transistor

Features *SOT89package *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyleadingtolessheatgeneration