30 V, 6 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5630PA. Features and benefits ■ Low collector-emitter saturatio

文件：175.85 Kbytes 页数：15 Pages

恩XP

丝印：A7；Package：HUSON3；30 V, 6 A NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors * Exposed heat sink for excellent thermal and electrical conductivity * Leadless small S

文件：289.44 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 6 A NPN low VCEsat (BISS) transistor

文件：175.85 Kbytes 页数：15 Pages

PHI

飞利浦

30 V, 6 A NPN low V_CEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n PNP complement: PBSS5630PA. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with m;

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 6A 3HUSON

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司