丝印：a5G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWER

天钰科技

丝印：A5G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWER

天钰科技

丝印：A5G21H605W19N；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

丝印：A5G21H605W19N；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

Airfast RF Power GaN Transistor

This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz. This part is characterized and performance is guaranteed for applications operating

文件：193.56 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz. This part is characterized and performance is guaranteed for applications operating

文件：193.56 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

• High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package

文件：499.67 Kbytes 页数：14 Pages

恩XP

Airfast RF Power GaN Transistor

• High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package

文件：499.67 Kbytes 页数：14 Pages

恩XP

Airfast RF Power GaN Amplifier

General description This 85 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 MHz to 1880 MHz. This part is characterized and performance is guaranteed for

文件：767.92 Kbytes 页数：15 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. This part is characterized and performance is guaranteed for a

文件：534.37 Kbytes 页数：14 Pages

恩XP