A5G08H800W19N数据手册贸易商恩智浦NXP-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
A5G08H800W19N	文件：499.67 Kbytes Page：14 Pages	Airfast RF Power GaN Transistor • High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package 文件：499.67 Kbytes 页数：14 Pages	恩XP	恩XP
A5G08H800W19NR3	文件：499.67 Kbytes Page：14 Pages	Airfast RF Power GaN Transistor • High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package 文件：499.67 Kbytes 页数：14 Pages	恩XP	恩XP
A5G08H800W19N	文件：300 bytes Page：1 Pages	865-960 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor	恩XP	恩XP
A5S66	文件：0 bytes Page：0 Pages	BGA	AMBARELLA 安霸半导体上传：深圳市恒创达实业有限公司	AMBARELLA

更多A5G08H800W19N供应商更新时间2026-10-5 16:50:00