型号：A5G21H605W19NR3；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

型号：A5G21H605W19NR3；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP