丝印：a5G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWERFitipower Integrated Technology Inc.

天鈺科技天鈺科技股份有限公司

丝印：A5G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWERFitipower Integrated Technology Inc.

天鈺科技天鈺科技股份有限公司

丝印：A5G21H605W19N；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

丝印：A5G21H605W19N；Package：OM-780-4S4S；Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

Airfast RF Power GaN Transistor

This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz. This part is characterized and performance is guaranteed for applications operating

文件：193.56 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz. This part is characterized and performance is guaranteed for applications operating

文件：193.56 Kbytes 页数：11 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 MHz to 2200 MHz. This part is characterized and performance is guaranteed f

文件：450.5 Kbytes 页数：14 Pages

恩XP

Airfast RF Power GaN Transistor

This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operatin

文件：192.51 Kbytes 页数：11 Pages

恩XP