丝印：A1S；Package：MSOP；Low Power, Precision, Auto-Zero Op Amps

FEATURES Low offset voltage: 13 μV maximum Input offset drift: 0.03 μV/°C Single-supply operation: 2.7 V to 5.5 V High gain, CMRR, and PSRR Low input bias current: 25 pA Low supply current: 180 μA Qualified for automotive applications APPLICATIONS Mobile communications Portable instrumen

文件：797.23 Kbytes 页数：24 Pages

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亚德诺

丝印：A1S；Package：MSOP；Low Power, Precision, Auto-Zero Op Amps

FEATURES Low offset voltage: 13 μV maximum Input offset drift: 0.03 μV/°C Single-supply operation: 2.7 V to 5.5 V High gain, CMRR, and PSRR Low input bias current: 25 pA Low supply current: 180 μA Qualified for automotive applications APPLICATIONS Mobile communications Portable instrumen

文件：797.23 Kbytes 页数：24 Pages

AD

亚德诺

丝印：A1S；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

文件：778 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A1S；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

文件：734.09 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A1S；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

文件：749.93 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMP2123LQ General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94327 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology IRLML6402 General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.89655 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features TrenchFET Power MOSFET

文件：1.46628 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：A1SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. The PMV48XPA uses advanced trench technology General Features VDS = -20V ID =-2.3A RDS(ON)

文件：1.94325 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A1SHB；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：883.22 Kbytes 页数：3 Pages

UMW

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