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10BJ120A

丝印:A120;Package:DO-214AA;Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件:1.58341 Mbytes 页数:7 Pages

SY

顺烨电子

10SMBJ120A

丝印:A120;Package:DO-214AA;5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件:3.35517 Mbytes 页数:6 Pages

UNSEMI

优恩半导体

1.0SMBJ120A

丝印:A120;1000 WATT TVS COMPONENT

文件:454.73 Kbytes 页数:7 Pages

PROTEC

SMA120A

丝印:A120A;Package:SMA;Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件:65.88 Kbytes 页数:3 Pages

CTC

ctconline

SMA120CA

丝印:A120CA;Package:SMA;Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

文件:65.88 Kbytes 页数:3 Pages

CTC

ctconline

AIMW120R035M1H

丝印:A120M1035;Package:PG-TO247-3-41;CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

文件:867.42 Kbytes 页数:17 Pages

Infineon

英飞凌

AIMW120R045M1

丝印:A120M1045;Package:PG-TO247-3-41;CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件:1.44426 Mbytes 页数:17 Pages

Infineon

英飞凌

AIMW120R060M1H

丝印:A120M1060;Package:PG-TO247-3-41;CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

文件:812.77 Kbytes 页数:17 Pages

Infineon

英飞凌

AIMW120R080M1

丝印:A120M1080;Package:PG-TO247-3-41;Silicon Carbide MOSFET

文件:843.07 Kbytes 页数:17 Pages

Infineon

英飞凌

A1200-40-3X

BeO 12 dB FLANGED ATTENUATOR

Features: ♦ BeO Material ♦ DC - 3 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount

文件:134.09 Kbytes 页数:1 Pages

BARRY

Vishay Barry

供应商型号品牌批号封装库存备注价格
UN SEMICONDUCTOR
24+
con
10000
查现货到京北通宇商城
询价
UN SEMICONDUCTOR
24+
con
2500
优势库存,原装正品
询价
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
询价
更多A120供应商 更新时间2025-9-16 14:01:00