10BJ120A

Marking：A120；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ120A

Marking：A120；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

1.0SMBJ120A

Marking：A120；1000 WATT TVS COMPONENT

SMA120A

Marking：A120A；Package：SMA；Transient Voltage Suppressors

FEATURES ConstructedwithGlassPassivatedDie Lowinductance Excellentclampingcapability Uniandbidirectionalunit Veryfastresponsetime ComponentinaccordancetoRoHS2002/95/EC

SMA120CA

Marking：A120CA；Package：SMA；Transient Voltage Suppressors

FEATURES ConstructedwithGlassPassivatedDie Lowinductance Excellentclampingcapability Uniandbidirectionalunit Veryfastresponsetime ComponentinaccordancetoRoHS2002/95/EC

AIMW120R035M1H

Marking：A120M1035；Package：PG-TO247-3-41；CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

AIMW120R045M1

Marking：A120M1045；Package：PG-TO247-3-41；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

AIMW120R060M1H

Marking：A120M1060；Package：PG-TO247-3-41；CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET

AIMW120R080M1

Marking：A120M1080；Package：PG-TO247-3-41；Silicon Carbide MOSFET