型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:A120;Package:DO-214AA;Transient Voltage Suppressors (TVS) Data Sheet Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01 文件:1.58341 Mbytes 页数:7 Pages | SY 顺烨电子 | SY | ||
丝印:A120;Package:DO-214AA;5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant 文件:3.35517 Mbytes 页数:6 Pages | UNSEMI 优恩半导体 | UNSEMI | ||
丝印:A120;1000 WATT TVS COMPONENT 文件:454.73 Kbytes 页数:7 Pages | PROTEC | PROTEC | ||
丝印:A120A;Package:SMA;Transient Voltage Suppressors FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC 文件:65.88 Kbytes 页数:3 Pages | CTC ctconline | CTC | ||
丝印:A120CA;Package:SMA;Transient Voltage Suppressors FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC 文件:65.88 Kbytes 页数:3 Pages | CTC ctconline | CTC | ||
丝印:A120M1035;Package:PG-TO247-3-41;CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET 文件:867.42 Kbytes 页数:17 Pages | Infineon 英飞凌 | Infineon | ||
丝印:A120M1045;Package:PG-TO247-3-41;CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件:1.44426 Mbytes 页数:17 Pages | Infineon 英飞凌 | Infineon | ||
丝印:A120M1060;Package:PG-TO247-3-41;CoolSiC??Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET 文件:812.77 Kbytes 页数:17 Pages | Infineon 英飞凌 | Infineon | ||
丝印:A120M1080;Package:PG-TO247-3-41;Silicon Carbide MOSFET 文件:843.07 Kbytes 页数:17 Pages | Infineon 英飞凌 | Infineon | ||
BeO 12 dB FLANGED ATTENUATOR Features: ♦ BeO Material ♦ DC - 3 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount 文件:134.09 Kbytes 页数:1 Pages | BARRY Vishay Barry | BARRY |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UN SEMICONDUCTOR |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
UN SEMICONDUCTOR |
24+ |
con |
2500 |
优势库存,原装正品 |
询价 | ||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
相关芯片丝印
更多- SMA120A
- AIMW120R035M1H
- AIMW120R060M1H
- KSA1220
- KSA1220A-TU
- DTA123JSA
- 2SA1241
- DTA124ESA
- DTA124ESA
- DTA124TSA
- DTA124XSA
- KTA1268
- ADS127L11IPWR
- ADS127L11IPWT
- 2SA1296-TA
- SMA12A
- AIMZHN120R010M1T
- AIMZHN120R030M1T
- AIMZHN120R060M1T
- AIMZHN120R120M1T
- AIMZH120R010M1T
- AIMZH120R030M1T
- AIMZH120R060M1T
- AIMZH120R120M1T
- TMA12N50H
- HM2301B
- MMBD1503A
- 1.0SMBJ13A
- 10SMBJ13A
- AD8676ARMZ
- MMBD1503A
- 1.0SMBJ130A
- 10BJ130A
- ADS130B02QPWRQ1
- SMA130CA
- ADS131B04QPWRQ1
- ADS131M02IPWT
- ADS131M03IPWR
- ADS131M03QPWRQ1
- ADS131M04IPWT
- SMA13A
- AP3N035N
- MMBD1504A
- MMBD1504A
- 74AHC1G14GV-Q100
相关库存
更多- SMA120CA
- AIMW120R045M1
- AIMW120R080M1
- KSA1220-TU
- KSA1220A
- DTA123YSA
- 2SA1244
- DTA124ESA
- DTA124GSA
- DTA124TSA
- DTA125TSA
- ADS127L11IPWR
- ADS127L11IPWT
- KSA1281YTA
- 2SA1296
- SMA12CA
- AIMZHN120R020M1T
- AIMZHN120R040M1T
- AIMZHN120R080M1T
- AIMZHN120R160M1T
- AIMZH120R020M1T
- AIMZH120R040M1T
- AIMZH120R080M1T
- AIMZH120R160M1T
- TMA12N65H
- MMBD1503A
- MMBD1503A
- PJA3413-AU_R1_000A1
- 10BJ13A
- AD8676ARMZ-REEL
- MMBD1503A_D87Z
- 10SMBJ130A
- SMA130A
- ADS130B04QPWRQ1
- ADS131B02QPWRQ1
- ADS131M02IPWR
- ADS131M02QPWRQ1
- ADS131M03IPWT
- ADS131M04IPWR
- ADS131M04QPWRQ1
- SMA13CA
- MMBD1504A
- MMBD1504A
- 1.0SMBJ14A
- 74AHC3G14DC-Q100