98AON93302G

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=203nC) •LowEffectiveOutputCapacitance(typ.Coss=260pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte

98AON93302G

MOSFET – Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionlossprov

98AON93302G

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−

98AON93302G

Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L

Features •Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ

98AON93302G

Silicon Carbide SiC MOSFET - 57 mohm, 650V, M2, TO-247-3L

Features •Typ.RDS(on)=57m@VGS=18V Typ.RDS(on)=75m@VGS=15V •UltraLowGateCharge(QG(tot)=61nC) •LowOutputCapacitance(Coss=107pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle

98AON93302G

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsec

98AON93302G

Silicon Carbide (SiC) MOSFET – 19 mohm,650V, M2, TO-247-3L

Features •Typ.RDS(on)=19m@VGS=18V Typ.RDS(on)=25m@VGS=15V •UltraLowGateCharge(QG(tot)=164nC) •LowCapacitance(Coss=278pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelin

98AON93302G

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterc

98AON93302G

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •

98AON93302G

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U