98AON93302G

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •

98AON93302G

Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

98AON93302G

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473−leadpackage,thisdeviceoffersgood performancewithlowonstatevoltageandlowswitchinglossesfor bothhardandsoftswitchingtopologiesinautomotiveapplications. Features Extremel

98AON93302G

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyin TO2473−leadpackage,thisdeviceoffersgoodperformancewithlow onstatevoltageandlowswitchinglossesforbothhardandsoft switchingtopologiesinautomotiveapplications. Features ExtremelyEfficientTrench

98AON93302G

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features •TypicalRDS(on)=23m@VGS=18V •UltraLowGateCharge(QG(tot)=69nC) •HighSpeedSwitchingwithLowCapacitance(Coss=153pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onsecondlevelinterconnection) Appli

98AON93302G

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features •Typ.RDS(on)=960m@VGS=20V •UltraLowGateCharge(QG(tot)=14nC) •HighSpeedSwitchingwithLowCapacitance(Coss=11pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on

98AON93302G

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost

98AON93302G

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

98AON93302G

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

98AON93302G

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte