MOSFET ??Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

文件：409.38 Kbytes 页数：9 Pages

ONSEMI

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

文件：471.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

文件：417.84 Kbytes 页数：10 Pages

ONSEMI

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Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100% UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS

文件：308.69 Kbytes 页数：7 Pages

ONSEMI

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Hybrid IGBT, 50 A, 650 V

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

文件：386.32 Kbytes 页数：11 Pages

ONSEMI

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Field Stop Trench IGBT 40 A, 650 V

Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current swi

文件：455.16 Kbytes 页数：11 Pages

ONSEMI

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IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effic

文件：385.35 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：436.51 Kbytes 页数：9 Pages

ONSEMI

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IGBT - Field Stop, Trench 75 A, 650 V

Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat)

文件：343.54 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Power, Co-PAK, N-Channel, Field Stop VII, (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

文件：469.28 Kbytes 页数：9 Pages

ONSEMI

安森美半导体