98AON93302G

MOSFET ??Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionlossprov

98AON93302G

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473−leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotiveapplications. Features

98AON93302G

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Usingthenovelfieldstop4thgenerationIGBTtechnologyandthe 1.5thgenerationSiCSchottkyDiodetechnology,AFGHL75T65SQDC offerstheoptimumperformancewithbothlowconductionand switchinglossesforhighefficiencyoperationsinvariousapplications, especiallytotempolebridgeless

98AON93302G

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •LowEffectiveOutputCapacitance(Coss=50pF) •100%UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS

98AON93302G

Hybrid IGBT, 50 A, 650 V

Usingthenovelfieldstop4thgenerationIGBTtechnologyandthe 1.5thgenerationSiCSchottkyDiodetechnology, AFGHL50T65SQDCofferstheoptimumperformancewithbothlow conductionandswitchinglossesforhighefficiencyoperationsin variousapplications,especiallytotempolebridgeless

98AON93302G

Field Stop Trench IGBT 40 A, 650 V

Description Usingthenovelfieldstop3rdgenerationIGBTtechnology, AFGHL40T65SPDofferstheoptimumperformancewithbothlow conductionlossandswitchinglossforahighefficiencyoperationin variousapplications,whichprovides50Vhigherblockingvoltage andruggedhighcurrentswi

98AON93302G

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnology inTO2473−leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotive applications. Features ExtremelyEffic

98AON93302G

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

Features •TypicalRDS(on)=32m@VGS=18V •UltraLowGateCharge(QG(tot)=55nC) •HighSpeedSwitchingwithLowCapacitance(Coss=114pF) •100%AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onsecondlevelinterconnection)

98AON93302G

IGBT - Field Stop, Trench 75 A, 650 V

Description Fieldstop4thgenerationLowVce(sat)IGBTtechnologyandFull currentratedcopakDiodetechnology. Features •MaximumJunctionTemperature:TJ=175°C •PositiveTemperatureCo−efficientforEasyParallelOperating •HighCurrentCapability •LowSaturationVoltage:VCE(Sat)

98AON93302G

IGBT - Power, Co-PAK, N-Channel, Field Stop VII, (FS7), SCR, Power TO247-3L 1200 V, 1.38 V, 25 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnology andtheGen7DiodeinTO2473−leadpackage,thisdeviceoffers theoptimumperformancewithlowonstatevoltageandminimal switchinglossesforbothhardandsoftswitchingtopologies inautomotiveapplications. Features