98AON93302G中文资料安森美半导体数据手册PDF规格书

Using the novel field stop 4th generation IGBT technology and the

1.5th generation SiC Schottky Diode technology,

AFGHL50T65SQDC offers the optimum performance with both low

conduction and switching losses for high efficiency operations in

various applications, especially totem pole bridgeless PFC and

Inverter.

特性 Features

 AEC−Q101 Qualified

 Maximum Junction Temperature : TJ = 175C

 Positive Temperature Co−efficient for Easy Parallel Operating

 High Current Capability

 Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A

 Fast Switching

 Tighten Parameter Distribution

 No Reverse Recovery/No Forward Recovery

Typical Applications

 Automotive

 On & Off Board Chargers

 DC−DC Converters

 PFC

 Industrial Inverter