98AON90827G中文资料安森美半导体数据手册PDF规格书

General Description

This N−Channel MOSFET is produced using ON Semiconductor’s

advanced MOSFET process that incorporates Shielded Gate

technology. This process has been optimized to minimize on−state

resistance and yet maintain superior switching performance with best

in class soft body diode.

Features

• Shielded Gate MOSFET Technology

• Max rDS(on) = 8.3 m at VGS = 10 V, ID = 16 A

• Max rDS(on) = 12.6 m at VGS = 6 V, ID = 13 A

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100 UIL Tested

• RoHS Compliant

Applications

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive