MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 m, 61 A

General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode

文件：307.12 Kbytes 页数：8 Pages

ONSEMI

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MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS010N10MCLTAG − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.08 Kbytes 页数：7 Pages

ONSEMI

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MOSFET – Power, Single N-Channel 40 V, 2.4 m, 136 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：280.05 Kbytes 页数：7 Pages

ONSEMI

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MOSFET – Power, Single N-Channel 40 V, 2.2 m, 142 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04CL − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.01 Kbytes 页数：7 Pages

ONSEMI

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MOSFET, N-Channel, Shielded Gate, POWERTRENCH

文件：395.57 Kbytes 页数：8 Pages

ONSEMI

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MOSFET ??Power, Single, N-Channel 40 V, 2.4 m, 136 A

文件：280.27 Kbytes 页数：7 Pages

ONSEMI

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MOSFET - Power, N-Channel, Shielded Gate 40 V, 2.75 m, 104 A

文件：308.43 Kbytes 页数：8 Pages

ONSEMI

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MOSFET - Power, N-Channel, Shielded Gate 60 V, 5.2 m, 78 A

文件：306.18 Kbytes 页数：8 Pages

ONSEMI

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