Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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Power Rectifiers, Ultra-fast Recovery

This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical t

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SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability

These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits • Ultrafast 75 Nanosecond Recovery Time

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Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

文件：184.59 Kbytes 页数：5 Pages

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Surface Mount Schottky Power Rectifier

The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and p

文件：196.6 Kbytes 页数：6 Pages

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Schottky Power Rectifier, Surface Mount, Fast Soft- Recovery 4.0 A, 200 V, SMC Package

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：257.11 Kbytes 页数：7 Pages

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Schottky Power Rectifier, Surface Mount, Fast Soft-Recovery 200V, 3.0A SMC Power Surface Mount Package

Features • Lower Forward Voltage than any Ultrafast Rectifier: VF

文件：201.75 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：183.52 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：249.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体