98AON97675F中文资料安森美半导体数据手册PDF规格书

These devices employ the Schottky Barrier principle in a large area

metal-to-silicon power diode. State-of-the-art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

特性 Features

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

(0.5 V Max @ 3.0 A, TJ = 25°C)

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard-Ring for Stress Protection

• Device Passes ISO 7637 Pulse #1

• SBRS8 and NRVB Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 217 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead

• Device Meets MSL 1 Requirements

• ESD Ratings:

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)