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The MBRS540T3 employs the Schottky Barrier principle in a large

area metal−to−silicon power diode. State−of−the−art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes in

surface mount applications where compact size and weight are critical

to the system.

特性 Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard−Ring for Stress Protection

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 217 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead

• ESD Rating:

♦ Machine Model, C (> 400 V)

♦ Human Body Model, 3B (> 8000 V)

• Device Meets MSL 1 Requirements