98AON93302G中文资料安森美半导体数据手册PDF规格书

特性 Features

• Typ. RDS(on) = 32 m @ VGS = 18 V

Typ. RDS(on) = 42 m @ VGS = 15 V

• Ultra Low Gate Charge (QG(tot) = 105 nC)

• High Speed Switching with Low Capacitance (Coss = 162 pF)

• 100 Avalanche Tested

• TJ < 175°C

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• SMPS (Switching Mode Power Supplies)

• Solar Inverters

• UPS (Uninterruptable Power Supplies)

• Energy Storages