Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：363.19 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 75 A

Description Field stop 4th generation Low VCE(sat) IGBT technology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat)

文件：427.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Tem

文件：623.1 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：455.85 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32mohm, 650 V, M3S, TO247-4L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：353.32 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：362.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT - FS, Trench 1200 V, 40 A

文件：592.5 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

文件：355.24 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

文件：532.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

文件：973.15 Kbytes 页数：10 Pages

ONSEMI

安森美半导体