Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI

文件：356.57 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI

文件：359.64 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：363.47 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L

Features  Typ. RDS(on) = 13 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 254 nC)  High Speed Switching with Low Capacitance (Coss = 262 pF)  100% Avalanche Tested  This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Ty

文件：368.6 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) T

文件：361.86 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second

文件：358.92 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A

Features • Typ. RDS(on) = 70 m @ VGS = 18 V Typ. RDS(on) = 95 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 50 nC) • Low Output Capacitance (Coss = 89 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Pb−Free and is RoHS Compliant Typical Applications • SMPS (Switching M

文件：344.09 Kbytes 页数：8 Pages

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

文件：670.94 Kbytes 页数：9 Pages

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安森美半导体

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

文件：563.71 Kbytes 页数：8 Pages

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安森美半导体

IGBT - Ultra Field Stop 1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor drive

文件：438.77 Kbytes 页数：11 Pages

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安森美半导体