Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features  Typical RDS(on) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100% Avalanche Tested  AEC−Q101 Qualified and PPAP Capable  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：477.26 Kbytes 页数：9 Pages

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Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L

Features • Typ. RDS(on) = 60 m @ VGS = 15 V Typ. RDS(on) = 43 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100% UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on seco

文件：895.48 Kbytes 页数：7 Pages

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IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-4L 1200 V, 1.4 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effici

文件：443.78 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2L

文件：358.85 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Typical Applications • Automotive On Bo

文件：353.48 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Complia

文件：366.09 Kbytes 页数：8 Pages

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IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

文件：575.32 Kbytes 页数：9 Pages

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IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L75T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially

文件：313.4 Kbytes 页数：9 Pages

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Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L

Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energ

文件：329.15 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 57 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 57 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 61 nC) • Low Output Capacitance (Coss = 107 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on seco

文件：320 Kbytes 页数：8 Pages

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安森美半导体