NPN Epitaxial Silicon Transistor

Features • VHF/UHF Transistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：216.07 Kbytes 页数：7 Pages

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NPN General - Purpose Amplifier

Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

文件：329.69 Kbytes 页数：9 Pages

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N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

文件：450.3 Kbytes 页数：11 Pages

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PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

文件：103.01 Kbytes 页数：4 Pages

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NPN Epitaxial Silicon Darlington Transistor

Features • Collector−Emitter Voltage: VCES=30 V • Collector Power Dissipation: PC (max)=625 mW • These are Pb−Free Devices

文件：200 Kbytes 页数：5 Pages

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NPN Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from process 03. See MPSA28 for characteristics. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：160.21 Kbytes 页数：5 Pages

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