MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 页数：10 Pages

ONSEMI

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MOSFET ??N-Channel, SUPERFET II, FRFET 650 V, 24 A, 150 m

Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide supe

文件：412.1 Kbytes 页数：10 Pages

ONSEMI

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IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

文件：523.85 Kbytes 页数：10 Pages

ONSEMI

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IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

文件：671.38 Kbytes 页数：10 Pages

ONSEMI

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IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

文件：809.35 Kbytes 页数：10 Pages

ONSEMI

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IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

文件：503.73 Kbytes 页数：9 Pages

ONSEMI

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Silicon Carbide Schottky Diode 1200 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：369.58 Kbytes 页数：7 Pages

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IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes 页数：9 Pages

ONSEMI

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IGBT - Field Stop, Trench 650 V, 50 A

文件：548.99 Kbytes 页数：10 Pages

ONSEMI

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：435.83 Kbytes 页数：10 Pages

ONSEMI

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