98AON13853G中文资料安森美半导体数据手册PDF规格书

描述 Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4th generation IGBTs offer the optimum

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

特性 Features

• Max Junction Temperature TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A

• 100% of the Parts Tested for ILM

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC