IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200V, 1.4V, 100A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor contr

文件：283.9 Kbytes 页数：9 Pages

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IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features 

文件：287.09 Kbytes 页数：9 Pages

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Ultra Field Stop IGBT, 1200 V, 75 A

General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s

文件：559.08 Kbytes 页数：9 Pages

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安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 140 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS. Features •

文件：325.13 Kbytes 页数：9 Pages

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安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features • M

文件：331.9 Kbytes 页数：9 Pages

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安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200V, 1.4V, 100A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor contr

文件：417.39 Kbytes 页数：9 Pages

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IGBT - Field Stop, Trench 75 A, 950 V

文件：665.77 Kbytes 页数：10 Pages

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安森美半导体

IGBT - Field Stop, Trench 75 A, 950 V

文件：596.81 Kbytes 页数：10 Pages

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安森美半导体

Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A

文件：427.74 Kbytes 页数：9 Pages

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安森美半导体