PCB Relay.

文件：119.29 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PCB Relay.

文件：119.29 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PCB Relay.

文件：119.29 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：8810；Package：DFN2x2-6L；MOSFET

Features - Low on-resistance. - Low threshold. - Fast switching speed. - Low gate drive.

文件：535.37 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：8812；Package：VSSOP；TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems

1 Features 1• For Cost-Optimized Systems • Nanopower Supply Current: 425 nA/channel • Offset Voltage: 500 μV (max) • TcVos: 1 μV/°C • Gain-Bandwidth: 6 kHz • Unity-Gain Stable • Low Input Bias Current : 100 fA • Wide Supply Range: 1.7 V to 5.5 V • Rail-to-Rail Output • No Output Reversal

文件：986.74 Kbytes 页数：28 Pages

TI

德州仪器

丝印：8812；Package：VSSOP；TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems

1 Features 1• For Cost-Optimized Systems • Nanopower Supply Current: 425 nA/channel • Offset Voltage: 500 μV (max) • TcVos: 1 μV/°C • Gain-Bandwidth: 6 kHz • Unity-Gain Stable • Low Input Bias Current : 100 fA • Wide Supply Range: 1.7 V to 5.5 V • Rail-to-Rail Output • No Output Reversal

文件：986.74 Kbytes 页数：28 Pages

TI

德州仪器

丝印：8812；Package：VSSOP；TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems

1 Features 1• For Cost-Optimized Systems • Nanopower Supply Current: 425 nA/channel • Offset Voltage: 500 μV (max) • TcVos: 1 μV/°C • Gain-Bandwidth: 6 kHz • Unity-Gain Stable • Low Input Bias Current : 100 fA • Wide Supply Range: 1.7 V to 5.5 V • Rail-to-Rail Output • No Output Reversal

文件：986.74 Kbytes 页数：28 Pages

TI

德州仪器

丝印：8812；Package：VSSOP；TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems

1 Features 1• For Cost-Optimized Systems • Nanopower Supply Current: 425 nA/channel • Offset Voltage: 500 μV (max) • TcVos: 1 μV/°C • Gain-Bandwidth: 6 kHz • Unity-Gain Stable • Low Input Bias Current : 100 fA • Wide Supply Range: 1.7 V to 5.5 V • Rail-to-Rail Output • No Output Reversal

文件：986.74 Kbytes 页数：28 Pages

TI

德州仪器

丝印：8815；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features Uses advanced Trench MOS technology Extremely low on-resistance RDS(ON) Fast Switching Speed Excellent Qg x RDS(ON) (FOM) Applications Load Switch for Portable Devices Voltage Controlled Small Signal Switch Halogen-Free & Lead-Free

文件：6.19478 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：8814A；Package：SOT23-6L；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：2.09315 Mbytes 页数：7 Pages

YFWDIODE

佑风微