Microminiature Pushbutton Switches

文件：194.99 Kbytes 页数：3 Pages

ITT

Microminiature Pushbutton Switches

文件：194.99 Kbytes 页数：3 Pages

ITT

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器