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CSD86330Q3D

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件:995.5 Kbytes 页数:23 Pages

TI

德州仪器

CSD86330Q3D

Synchronous Buck NexFET??Power Block

文件:1.1848 Mbytes 页数:16 Pages

TI

德州仪器

CSD86330Q3D

Synchronous Buck NexFET??Power Block

文件:1.22852 Mbytes 页数:20 Pages

TI

德州仪器

CSD86330Q3D.B

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件:995.5 Kbytes 页数:23 Pages

TI

德州仪器

CSD86330Q3DG4.B

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件:995.5 Kbytes 页数:23 Pages

TI

德州仪器

CSD86330Q3DT

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件:995.5 Kbytes 页数:23 Pages

TI

德州仪器

CSD86330Q3D_11

Synchronous Buck NexFET??Power Block

文件:1.22852 Mbytes 页数:20 Pages

TI

德州仪器

CSD86330Q3D

采用 3mm x 3mm SON 封装的 20A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块

The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offerin • Half-Bridge Power Block\n• 90% System Efficiency at 15 A\n• Up to 20 A Operation\n• High Frequency Operation (Up To 1.5 MHz)\n• High Density – SON 3.3 mm × 3.3 mm Footprint\n• Optimized for 5 V Gate Drive\n• Low Switching Losses\n• Ultra Low Inductance Package\n• RoHS Compliant\n• Halogen Free;

TI

德州仪器

技术参数

  • VDS (V):

    25

  • Power loss (W):

    1.9

  • Ploss current (A):

    15

  • ID - continuous drain current at Ta=25degC (A):

    20

  • Operating temperature range (C):

    -55 to 150

  • Features:

    Power supply

  • Duty cycle (%):

    Low

供应商型号品牌批号封装库存备注价格
TI
97+
SON8
20000
专注TI原厂渠道
询价
TI
14+
SON-8
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
询价
TI
25+
8SON
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
24+
SON8
5630
TI一级代理原厂授权渠道实单支持
询价
TI
17+
SON8
2172
TI原装/深圳库存c5
询价
TI
24+
SON8
10000
专注原装正品!现货库存!
询价
TI
2021+
原厂原封装
93628
原装进口现货 假一罚百
询价
TI
23+
SON8
8000
原装正品假一罚十
询价
TI
21+
SON-8
20000
全新原装公司现货
询价
TI
24+
SON8
12500
原装正品优势供应支持实单
询价
更多CSD86330Q3D供应商 更新时间2025-10-4 16:40:00