| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：7N65MJD2；Package：TO-251J-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.86 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：7N65MJD2；Package：TO-251J-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：289.86 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：7N65MJD2；Package：TO-251J-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：281.13 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：7N65MJD2；Package：TO-251J-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de 文件：281.13 Kbytes 页数：10 Pages | SILAN 士兰微 | SILAN | ||
丝印：7N65AT；Package：TO-220AB；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
丝印：7N65AF；Package：TO-220F(0.5mm)；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
丝印：7N65AS；Package：TO-263；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
丝印：7N65AS；Package：TO-263；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
丝印：7N65AMJ；Package：TO-251；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE | ||
丝印：7N65AD；Package：TO-252；7A 650V N-channel enhancement mode field effect transistor 7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability 文件：1.08437 Mbytes 页数：7 Pages | YFWDIODE 佑风微 | YFWDIODE |
技术参数
- Vdss(V)：
650
- Vgss(V)：
30
- Id(A)：
7.4
- Package：
TO-220/TO-220F/TO-22...
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOODSEMI |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
询价 | ||
RUICHIPS/锐骏 |
22+23+ |
TO-220F |
85192 |
代理假一罚十全新原装 |
询价 | ||
KEC |
07+ |
TO220F |
1440 |
只售原装正品 |
询价 | ||
GOODSEMI |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MM |
25+23+ |
TO-220F |
38891 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
士兰微 |
24+ |
TO-220F |
998031 |
代理原装正品现货低价假一赔十 |
询价 | ||
UTC友顺 |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
UTC/友顺 |
2447 |
TO-220F220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
KEC |
21+ |
TO220F |
120000 |
长期代理优势供应 |
询价 | ||
士兰微 |
23+ |
TO-220F |
16000 |
原装正品假一罚百!可开增票! |
询价 |
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