N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：347.88 Kbytes 页数：8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：206.11 Kbytes 页数：6 Pages

UTC

友顺

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：281.13 Kbytes 页数：10 Pages

SILAN

士兰微

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特

650V N-Channel Enhancement Mode MOSFET

Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system mini

文件：4.24023 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：347.88 Kbytes 页数：8 Pages

UTC

友顺

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.55 Kbytes 页数：10 Pages

SILAN

士兰微

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.56 Kbytes 页数：10 Pages

SILAN

士兰微

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.55 Kbytes 页数：10 Pages

SILAN

士兰微

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特