N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

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UTC

友顺

7.4A, 650V   N-CHANNEL  POWER MOSFET

The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching po • RDS(ON) = 1.2Ω @ VGS = 10V, ID = 3.7A \n• Fast switching capability \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

文件：722.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：886.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：886.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体