丝印：7L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：7L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：7L；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：271.43 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7L；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：741.87 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7L；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ZT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：273.06 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7L；Package：DFN1006-2；Ultra low capacitance bidirectional ESD protection diode

1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) ultra small and leadless Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. F

文件：233.41 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7L；Package：X2SON；TLV703x and TLV704x Small-Size, Nanopower, Low-Voltage Comparators

1 Features • Ultra-small X2SON, WSON, WQFN packages • Wide supply voltage range of 1.6V to 6.5V • Quiescent supply current of 315nA • Low propagation delay of 3μs • Rail-to-rail common-mode input voltage • Internal hysteresis • Push-pull output (TLV703x) • Open-drain output (TLV704x) • No

文件：4.2342 Mbytes 页数：68 Pages

TI

德州仪器

丝印：7L；Package：X2SON；TLV703x and TLV704x Small-Size, Nanopower, Low-Voltage Comparators

1 Features • Ultra-small X2SON, WSON, WQFN packages • Wide supply voltage range of 1.6V to 6.5V • Quiescent supply current of 315nA • Low propagation delay of 3μs • Rail-to-rail common-mode input voltage • Internal hysteresis • Push-pull output (TLV703x) • Open-drain output (TLV704x) • No

文件：4.20297 Mbytes 页数：68 Pages

TI1

德州仪器

丝印：7L；Package：CST2；Schottky Barrier Diode Silicon Epitaxial

文件：166.25 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：7L；Package：USC；Schottky Barrier Diode Silicon Epitaxial

文件：158.14 Kbytes 页数：5 Pages

TOSHIBA

东芝