PBRN113ZT-Q中文资料安世数据手册PDF规格书

1. General description

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBRP113ZT-Q

2. Features and benefits

• 600 mA output current capability

• Low collector-emitter saturation voltage VCEsat

• High current gain hFE

• Reduces component count

• Built-in bias resistors

• Reduces pick and place costs

• Simplifies circuit design

• ± 10 resistor ratio tolerance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Digital application in automotive and industrial segments

• Switching loads

• Medium current peripheral driver