丝印：7MP；Package：DFN2510；4-Line Ultra Low Capacitance TVS Diode Array

Features Ultra low capacitance: 0.2pF typical(10/ to 1/0) Low operating voltage : +3.6V Low clamping voltage Up to 4 lines protects Leadless flow-through package Complies with following standards: —IEC 61000-4-2 (ESD) immunity test Air discharge: £20kV Contact discharge: +20kV —IEC61000-

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丝印：7MP；Package：DFN2510；4-Line Ultra Low Capacitance TVS Diode Array

Features • Ultra low capacitance: 0.25pF typical(IO/ to I/O) • Low operating voltage: 3.3V • Low clamping voltage • Up to 4 lines protects • Leadless flow-through package • Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV

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丝印：7MP；Package：DFN2510；0.2pf 4-Line Ultra Low Capacitance TVS Diode Array

Features + Ultra low capacitance: 0.2pF typical(10/ to 1/0) + Low operating voltage: SV. « Low clamping voltage + Upto 4 lines protects « Leadless flow-through package + Complies with following standards: * _IEC 61000-4-2 (ESD) immunity test Air discharge: £20kV/ Contact discharge: £15kV

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PNP Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier Applications

PNP Epitaxial Planar Silicon Transistor Features • High fT and small Cre (fT=750MHz typ, Cre=1.3pF typ). • Complementary pair with the 7MN05SF. • Small package permitting 7MP05SF applied sets to made small and slim.

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