| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：7N04N006；Package：PG-HSOF-5-1；Automotive MOSFET OptiMOSTM 7 Power-Transistor Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel-Enhancementmode-NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2aupto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100Avalanche | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：7N04N006；Package：PG-TDSON-8-43；OptiMOS™ 7 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100Avalanchet | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：7N04N006；Package：PG-HSOG-4-1；OptiMOSTM 7 Power-Transistor Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel-Enhancementmode-NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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