丝印：7N04N006；Package：PG-HSOF-5-1；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2a up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 Avalanche

文件：3.12825 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：7N04N006；Package：PG-TDSON-8-43；OptiMOS™ 7 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 Avalanche t

文件：749.28 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：7N04N006；Package：PG-HSOG-4-1；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：3.34582 Mbytes 页数：12 Pages

Infineon

英飞凌