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IAUCN04S7N009

Marking:7N04N009;Package:PG-TDSON-8-34;OptiMOS™ 7 Power-Transistor

Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100Avalanchet

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IAUMN04S7N009G

Marking:7N04N009;Package:PG-HSOG-4-1;OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel-Enhancementmode-NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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