BC846BSH

Marking：7J；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

BC846BSH-Q

Marking：7J；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

BZX38450-C9V1

Marking：7J；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX38450-C9V1-Q

Marking：7J；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX8850S-C12

Marking：7J；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

BZX8850S-C12-Q

Marking：7J；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

PBRN123ET

Marking：7J；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ET

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

PBRN123ET-Q

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

RT8816AGQW

Marking：7J；Package：WQFN-20L；Dual-Phase PWM Controller with PWM-VID Reference

Features Dual-PhasePWMController PowerStateIndicator 1P-CCM/2P-CCM/1P-DEM/2P-DEM TwoEmbeddedMOSFETDriversandEmbedded SwitchingBootDiode Support1.8VPWM-VIDInterface ExternalReferenceInputControl PWM-VIDDynamicVoltageControl DynamicPhaseNumberControl LosslessRDS(O