丝印：7J；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：235.65 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：236.82 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features * 800 mA output current capability * High current gain hFE * Built-in bias resistors * Simplifies circuit design * Low collector-emitter saturation voltage VCEsat * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：740.04 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：268.64 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：270.15 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7J；Package：WQFN-20L；Dual-Phase PWM Controller with PWM-VID Reference

Features Dual-Phase PWM Controller Power State Indicator  1P-CCM/2P-CCM/1P-DEM/2P-DEM Two Embedded MOSFET Drivers and Embedded Switching Boot Diode Support 1.8V PWM-VID Interface External Reference Input Control PWM-VID Dynamic Voltage Control Dynamic Phase Number Control Lossless RDS(O

文件：352.62 Kbytes 页数：21 Pages

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