PBRN123ET-Q中文资料安世数据手册PDF规格书

厂商型号	PBRN123ET-Q
功能描述	40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
丝印标识	7J
封装外壳	SOT23
文件大小	270.15 Kbytes
页面数量	13 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-10 23:00:00
人工找货	PBRN123ET-Q价格和库存，欢迎联系客服免费人工找货

1. General description

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBRP123ET-Q

2. Features and benefits

• 600 mA output current capability

• Low collector-emitter saturation voltage VCEsat

• High current gain hFE

• Reduces component count

• Built-in bias resistors

• Reduces pick and place costs

• Simplifies circuit design

• ± 10 resistor ratio tolerance

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Digital application in automotive and industrial segments

• Switching loads

• Medium current peripheral driver