丝印：7J；Package：TSSOP6；65 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：236.82 Kbytes 页数：10 Pages

NEXPERIA

安世

65 V, 100 mA NPN/NPN general-purpose double transistor

NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC856BSH-Q\n NPN/PNP complement: BC846BPNH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended f;

Nexperia

安世

65 V, 100 mA NPN/NPN general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive

文件：249.46 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN general purpose transistors

DESCRIPTION NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data proce

文件：46.98 Kbytes 页数：8 Pages

PHI

PHI

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T

文件：229.15 Kbytes 页数：9 Pages

INFINEON

英飞凌