PBRN123ET

Marking：7J；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123ET

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

PBRN123ET

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

PBRN123ET-Q

Marking：7J；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

PBRN123ET,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 40V TO236AB

Nexperia USA Inc.

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123Y_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance