丝印：7C；Package：SOT-23；Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817-AU series

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PANJIT

強茂

丝印：7C；Package：TSSOP6；45 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：235.66 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：TSSOP6；45 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：236.83 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：SOT23；NPN switching transistor

FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

文件：344.2 Kbytes 页数：8 Pages

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安世安世半导体(中国)有限公司

丝印：7C；Package：SC-70；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.65 Kbytes 页数：15 Pages

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丝印：7C；Package：SOT23；Double ESD protection diodes in SOT23 package

FEATURES · Unidirectional ESD protection of up to two lines · Common-cathode configuration · Max. peak pulse power: Ppp = 330 W at tp = 8/20 ms · Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A · Ultra-low reverse leakage current: IRM 30 kV · IEC 61000-4-2; lev

文件：241.54 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司