丝印：7C；Package：TSSOP6；45 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

文件：235.66 Kbytes 页数：10 Pages

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丝印：7C；Package：TSSOP6；45 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

文件：236.83 Kbytes 页数：10 Pages

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45 V, 100 mA NPN/NPN general-purpose double transistor

NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC857BSH\n NPN/PNP complement: BC847BPNH • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C;

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45 V, 100 mA NPN/NPN general-purpose double transistor

NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC857BSH-Q\n NPN/PNP complement: BC847BPNH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended f;

Nexperia

安世