74V1G03C资料datasheet下载批发采购-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
74V1G03C	文件：49.73 Kbytes Page：7 Pages	SINGLE 2-INPUT OPEN DRAIN NAND GATE DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH N 文件：49.73 Kbytes 页数：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G03CTR	文件：112.14 Kbytes Page：9 Pages	SINGLE 2-INPUT OPEN DRAIN NAND GATE 文件：112.14 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G03C	文件：300 bytes Page：1 Pages	SINGLE 2-INPUT OPEN DRAIN NAND GATE	ST 意法半导体	ST
74V1G03S	文件：49.73 Kbytes Page：7 Pages	SINGLE 2-INPUT OPEN DRAIN NAND GATE DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH N 文件：49.73 Kbytes 页数：7 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
74V1G03STR	文件：112.14 Kbytes Page：9 Pages	SINGLE 2-INPUT OPEN DRAIN NAND GATE 文件：112.14 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多74V1G03C供应商更新时间2025-11-30 15:13:00