SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

文件：48.45 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件：108.53 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

ST

意法半导体

SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

文件：48.45 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

文件：48.45 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件：108.53 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件：108.53 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件：108.53 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

ST

意法半导体

Package：5-TSSOP，SC-70-5，SOT-353；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 缓冲器，驱动器，接收器，收发器 描述：IC BUF NON-INVERT 5.5V SOT323-5

STMICROELECTRONICS

意法半导体